Document Details

Document Type : Article In Journal 
Document Title :
Growth and Transport Properties of some Gallium Chalcogenides from the Group M2III X3VI Semiconductor Compounds
إنماء و دراسة الخواص الانتقالية لبعض مركبات الجاليوم الشالكوجيندية شبه الموصلة من المجموعة M2III X3VI
 
Subject : Growth and Transport Properties of some Gallium Chalcogenides from the Group M2III X3VI Semiconductor Compounds 
Document Language : English 
Abstract : High quality ? – Ga2 S3 single crystal were grown by a modified Bridgman method. The crystals were identified by X-ray diffraction. Measurements of electrical conductivity and Hall effect were performed in the range [ 278 – 563K] and [158 – 496K] for thermoelectric power (TEP). From these measurements the conductivity of the crystals was p-type. The electrical conductivity, Hall mobility, and hole concentration at 300K were found to be about 2.5x10-5 ?-1 cm-1 , 1.67x104 cm2 v-1 s-1 and 9.58x109 cm-3 respectively. The energy gap was found to be 1.75 eV. From the obtained experimental data several physical parameters such as diffusion coefficient, diffusion lengths, effective masses, relaxation time of carriers were estimated. In addition to these pronounced parameters, the efficiency of the thermoelectric element [figure of merit] was evaluated which leads to better application in the field of energy conversion technique. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 23 
Issue Number : 2 
Publishing Year : 1432 AH
2011 AD 
Article Type : Article 
Added Date : Thursday, October 3, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
نجات توفيق عباسAbbas, Najat TawfeegResearcher  
فاطمة باهبريBahabri, Fatmah Researcher  
رقية العرينيAloraini, Rugaiah Researcher  
محمد علي أبوزيدAbozaid, Mohammad AliResearcher  
صباح القرنيAlgarni, Sabah Researcher  
وفاء الغامديAlgamdi, Wafaa Researcher  

Files

File NameTypeDescription
 36145.pdf pdf 

Back To Researches Page